WSD100N06GDN56 N-channel 60V 100A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET dulmarka alaabta
Korantada WSD100N06GDN56 MOSFET waa 60V, hadda waa 100A, iska caabintuna waa 3mΩ, Kanaalka waa N-channel, xirmooyinkuna waa DFN5X6-8.
WINSOK MOSFET meelaha codsiga
Awoodda caafimaadku waxay siisaa MOSFET, PDs MOSFET, Drones MOSFET, sigaarka elektarooniga ah MOSFET, qalabka waaweyn MOSFET, iyo qalabka korontada MOSFET.
WINSOK MOSFET waxay u dhigantaa lambarada alaabta summada kale
AOS MOSFET AON6264C,AON6264E,AON6266E,AONS6662.STMicroelectronics MOSFET STL13N6F7,STL14N6F7.PANJIT MOSFET PSMQC33N6NS1.POTENS Semiconductor MOSFET PDC692X
Qiyaasta MOSFET
| Astaanta | Halbeegga | Qiimaynta | Unugyo | ||
| VDS | Qulqulka-Isha Voltage | 60 | V | ||
| VGS | Gate-Source Voltage | ±20 | V | ||
| ID1,6 | Biyo-mareenka Joogtada ah ee Hadda | TC=25°C | 100 | A | |
| TC=100°C | 65 | ||||
| IDM2 | Biyo-mareenka hadda | TC=25°C | 240 | A | |
| PD | Korontada ugu sarreysa | TC=25°C | 83 | W | |
| TC=100°C | 50 | ||||
| IAS | Avalanche Current, Hal garaac | 45 | A | ||
| EAS3 | Hal garaaca Qulqulka Qulqulka Tamarta | 101 | mJ | ||
| TJ | Heerkulka ugu sarreeya ee isgoyska | 150 | ℃ | ||
| TSTG | Heerkulka Heerkulka ee Kaydinta | -55 ilaa 150 | ℃ | ||
| RθJA1 | Isgoysyada iska caabinta kulaylka ilaa ambient | Gobolka joogta | 55 | ℃/W | |
| RθJC1 | Iska caabinta kulaylka-Isgoysyada Kiis | Gobolka joogta | 1.5 | ℃/W | |
| Astaanta | Halbeegga | Shuruudaha | Min. | Nooca | Max. | Unug | |
| Joogta ah | |||||||
| V(BR)DSS | Korontada Burburinta Biyaha-Isha | VGS = 0V, ID = 250μA | 60 | V | |||
| IDSS | Eber Albaabka Voltage Daaditaanka Hadda | VDS = 48 V, VGS = 0V | 1 | µA | |||
| TJ=85°C | 30 | ||||||
| IGSS | Ka Bixinta Albaabka Hadda | VGS = ± 20V, VDS = 0V | ± 100 | nA | |||
| On Tilmaamaha | |||||||
| VGS(TH) | Gate Threshold Voltage | VGS = VDS, IDS = 250µA | 1.2 | 1.8 | 2.5 | V | |
| RDS (daran)2 | Biyo-Daan-Isha Iska-caabbinta Gobolka | VGS = 10V, ID = 20A | 3.0 | 3.6 | mΩ | ||
| VGS = 4.5V, ID = 15A | 4.4 | 5.4 | mΩ | ||||
| Wareegid | |||||||
| Qg | Wadarta Kharashka Albaabka | VDS=30V VGS=10V Aqoonsi=20A | 58 | nC | |||
| Qgs | Albaab-Dhaanaanta | 16 | nC | ||||
| Qgd | Kharashka Gate-Drain | 4.0 | nC | ||||
| td (daar) | Waqtiga daahitaanka ee daar | VGEN=10V VDD=30V Aqoonsi=20A RG=Ω | 18 | ns | |||
| tr | Daar-On Rise Time | 8 | ns | ||||
| td (off) | Waqtiga dib u dhigista demi | 50 | ns | ||||
| tf | Deminta wakhtiga dayrta | 11 | ns | ||||
| Rg | Iska caabin Gat | VGS=0V, VDS=0V, f=1MHz | 0.7 | Ω | |||
| Firfircoon | |||||||
| Ciise | In Capacitance | VGS=0V VDS=30V f=1MHz | 3458 | pF | |||
| Coss | Awood ka baxsan | 1522 | pF | ||||
| Crss | Awoodda Wareejinta Dib u celinta | 22 | pF | ||||
| Sifooyinka Diode-Source Diode iyo Qiimaynta ugu badan | |||||||
| IS1,5 | Isha Joogtada ah ee Hadda | VG=VD=0V , Xoog hadda | 55 | A | |||
| ISM | Isha Pulsed Current3 | 240 | A | ||||
| VSD2 | Diode Forward Voltage | ISD = 1A, VGS=0V | 0.8 | 1.3 | V | ||
| trr | Wakhtiga Soo kabashada | ISD=20A, dlSD/dt=100A/µs | 27 | ns | |||
| Qrr | Dib u Celinta Lacagta Soo Kabashada | 33 | nC | ||||
