WSD2090DN56 N-channel 20V 80A DFN5*6-8 WINSOK MOSFET

sharaxaad gaaban:

Nambarka Qaabka:WSD2090DN56

BVDSS:20V

RDSON:2.8mΩ

Aqoonsiga:80A

Kanaalka:N-channel

Xidhmada:DFN5*6-8

Badeecada Xagaaga:Korantada WSD2090DN56 MOSFET waa 20V, hadda waa 80A, iska caabintuna waa 2.8mΩ, Kanaalka waa N-channel, xirmooyinkuna waa DFN5*6-8.

Codsiyada:Sigaarka elektarooniga ah, diyaaradaha aan duuliyaha lahayn, qalabka korontada, qoryaha fascia, PD, qalabka guryaha yar yar, iwm.

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Sharaxaada Guud

WSD2090DN56 waa hoyga ugu waxqabadka sarreeya N-Ch MOSFET oo leh cufnaanta unug aad u sarreeya, kaas oo bixiya RDSON aad u fiican iyo kharashka albaabka inta badan codsiyada beddelka buck-ka. WSD2090DN56 waxay buuxinaysaa shuruudaha RoHS iyo Cagaaran 100% EAS oo la dammaanad qaaday isku halaynta buuxda ee shaqada.

Astaamaha

Tignoolajiyada cufnaanta unugyada sare ee sare, Kharashka Albaabka ugu hooseeya, Hoos u dhaca saamaynta CdV / dt, 100% EAS waa la dammaanad qaaday, Qalab Cagaaran oo la heli karo

Codsiyada

Beddelka, Nidaamka Korontada, Shidaalka Load, Sigaarka elektaroonigga ah, Diyaaradaha aan duuliyaha lahayn, Qalabka Korontada, Qoryaha Fascia, PD, Qalabka Guryaha ee yaryar, iwm.

lambarka alaabta u dhigma

AOS AON6572

Halbeegyada muhiimka ah

Heerarka ugu sarreeya (TC=25℃ ilaa si kale loo xuso)

Astaanta	Halbeegga	Max.	Unugyo
VDSS	Qulqulka-Isha Voltage	20	V
VGSS	Gate-Source Voltage	±12	V
ID@TC=25℃	Biyo-bax joogto ah oo socda, VGS @ 10V1	80	A
ID@TC=100℃	Biyo-bax joogto ah oo socda, VGS @ 10V1	59	A
IDM	Biyo shuban oo la garaaco note hadda1	360	A
EAS	Hal pulsed Avalanche Energy note2	110	mJ
PD	Quwadda Korontada	81	W
RθJA	Iska caabinta kulaylka, Isgoysyada Kiis	65	℃/W
RJC	Isgoysyada iska caabinta kulaylka-Kiiska 1	4	℃/W
TJ, TSTG	Xaddiga heerkulka hawlgalka iyo kaydinta	-55 ilaa +175	℃

Tilmaamaha Korontada (TJ=25 ℃, ilaa si kale loo xuso)

Astaanta	Halbeegga	Shuruudaha	Min	Nooca	Max	Unugyo
BVDSS	Korontada Burburinta Biyaha-Isha	VGS=0V, ID=250μA	20	24	---	V
△BVDSS/△TJ	Heerkulka BVDSS	Tixraaca 25℃, ID=1mA	---	0.018	---	V/℃
VGS(th)	Gate Threshold Voltage	VDS= VGS, ID=250μA	0.50	0.65	1.0	V
RDS(ON)	Dheecaan-Isha Joogta ah ee Iska-caabbinta	VGS=4.5V, ID=30A	---	2.8	4.0	mΩ
RDS(ON)	Dheecaan-Isha Joogta ah ee Iska-caabbinta	VGS=2.5V, ID=20A	---	4.0	6.0	mΩ
IDSS	Eber Albaabka Voltage Daaditaanka Hadda	VDS=20V,VGS=0V	---	---	1	μA
IGSS	Ka-baxa Jidhka ee Hadda	VGS=±10V, VDS=0V	---	---	± 100	nA
Ciise	Awood-gelinta wax-soo-gelinta	VDS=10V,VGS=0V,f=1MHZ	---	3200	---	pF
Coss	Awoodda wax-soo-saarka		---	460	---
Crss	Awoodda Wareejinta Dib u celinta		---	446	---
Qg	Wadarta Kharashka Albaabka	VGS=4.5V,VDS=10V,ID=30A	---	11.05	---	nC
Qgs	Kharashka Albaabka-Isha		---	1.73	---
Qgd	Kharashka Gate-Drain		---	3.1	---
tD (daar)	Waqtiga daahitaanka ee daar	VGS=4.5V, VDS=10V,ID=30ARGEN=1.8Ω	---	9.7	---	ns
tr	Daar-On Rise Time		---	37	---
tD (off)	Waqtiga dib u dhigista demi		---	63	---
tf	Deminta dayrta Waqtiga		---	52	---
VSD	Diode Forward Voltage	IS=7.6A,VGS=0V	---	---	1.2	V