WSD30L88DN56 Dual P-channel -30V -49A DFN5*6-8 WINSOK MOSFET

sharaxaad gaaban:

Nambarka Qaabka:WSD30L88DN56

BVDSS:30V

RDSON:11.5mΩ

Aqoonsiga:-49A

Kanaalka:Laba-channel-ka P

Xidhmada:DFN5*6-8

Badeecada Xagaaga:Awoodda WSD30L88DN56 MOSFET waa -30V, hadda waa-49A, iska caabintuna waa 11.5mΩ, kanaalka waa Dual P-channel, xirmooyinkuna waa DFN5*6-8.

Codsiyada:Sigaarka elektaroonigga ah, dallacaadda wireless-ka, matoorada, diyaaradaha aan duuliyaha lahayn, daryeelka caafimaadka, dabaylaha baabuurta, kontaroolayaasha, alaabada dhijitaalka ah, qalabka guriga yar, qalabka elektarooniga ah ee macaamiisha.

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Sharaxaada Guud

WSD30L88DN56 waa hoyga ugu waxqabadka sarreeya Dual P-Ch MOSFET oo leh cufnaanta unug aad u sarreeya, kaas oo bixiya RDSON aad u fiican iyo kharashka albaabka inta badan codsiyada beddelka buck-ka. WSD30L88DN56 waxay buuxinaysaa shuruudaha RoHS iyo Cagaaran 100% EAS oo la dammaanad qaaday isku halaynta buuxda ee shaqada.

Astaamaha

Tignoolajiyada cufnaanta unugyada sare ee sare ， Super Low Gate Charge ， Hoos u dhaca saamaynta CdV/dt ， 100% EAS La dammaanad qaaday ， Qalab Cagaaran La heli karo.

Codsiyada

Isku-beddelka Dhibcaha Sare ee Dhibc-Load Synchronous, Beddelka MB/NB/UMPC/VGA alaabta, qalabka guriga yar, elektarooniga macaamiisha.

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Halbeegyada muhiimka ah

Astaanta	Halbeegga	Qiimaynta	Unugyo
VDS	Qulqulka-Isha Voltage	-30	V
VGS	Gate-Source Voltage	±20	V
ID@TC=25℃	Biyo-bax joogto ah oo socda, VGS @ -10V1	-49	A
ID@TC=100℃	Biyo-bax joogto ah oo socda, VGS @ -10V1	-23	A
IDM	Daadi Jiifka Hadda2	-120	A
EAS	Hal garaaca Qulqulka Qulqulka Tamarta3	68	mJ
PD@TC=25℃	Wadarta Korontada Bakhtiinta4	40	W
TSTG	Heerkulka Heerkulka ee Kaydinta	-55 ilaa 150	℃
TJ	Heerkulka Heerkulka ee Isgoyska	-55 ilaa 150	℃