WSD6040DN56 N-channel 60V 36A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET dulmarka alaabta
Korantada WSD6040DN56 MOSFET waa 60V, hadda waa 36A, iska caabintuna waa 14mΩ, Kanaalka waa N-channel, xirmooyinkuna waa DFN5X6-8.
WINSOK MOSFET meelaha codsiga
Sigaarka elektaroonigga ah MOSFET, ku dallacaadda wireless MOSFET, matoorada MOSFET, drones MOSFET, daryeelka caafimaadka MOSFET, xajiyeyaasha baabuurta MOSFET, kontaroolayaasha MOSFET, alaabta dhijitaalka ah MOSFET, qalabka guryaha yar MOSFET, elektarooniga macaamiisha MOSFET.
WINSOK MOSFET waxay u dhigantaa lambarada alaabta summada kale
AOS MOSFET AON6264C,AON6264E,AON6266E,AONS6662.STMicroelectronics MOSFET STL8DN6LF6AG.PANJIT MOSFET PSMQC12N6LS1.POTENS Semiconductor MOSFET PDC6964X.
Qiyaasta MOSFET
| Astaanta | Halbeegga | Qiimaynta | Unugyo | ||
| VDS | Qulqulka-Isha Voltage | 60 | V | ||
| VGS | Gate-Source Voltage | ±20 | V | ||
| ID | Biyo-mareenka Joogtada ah ee Hadda | TC=25°C | 36 | A | |
| TC=100°C | 22 | ||||
| ID | Biyo-mareenka Joogtada ah ee Hadda | TA=25°C | 8.4 | A | |
| TA=100°C | 6.8 | ||||
| IDMa | Biyo-mareenka Wacan ee Hadda | TC=25°C | 140 | A | |
| PD | Korontada ugu sarreysa | TC=25°C | 37.8 | W | |
| TC=100°C | 15.1 | ||||
| PD | Korontada ugu sarreysa | TA=25°C | 2.08 | W | |
| TA=70°C | 1.33 | ||||
| IAS c | Avalanche Current, Hal garaac | L=0.5mH | 16 | A | |
| EASc | Hal garaaca Qulqulka Qulqulka Tamarta | L=0.5mH | 64 | mJ | |
| IS | Diode Horumarka Joogtada ah ee Hadda | TC=25°C | 18 | A | |
| TJ | Heerkulka ugu sarreeya ee isgoyska | 150 | ℃ | ||
| TSTG | Heerkulka Heerkulka ee Kaydinta | -55 ilaa 150 | ℃ | ||
| RθJAb | Isgoysyada iska caabinta kulaylka ilaa ambient | Gobolka Jooga | 60 | ℃/W | |
| RθJC | Iska caabinta kulaylka-Isgoysyada Kiis | Gobolka Jooga | 3.3 | ℃/W | |
| Astaanta | Halbeegga | Shuruudaha | Min. | Nooca | Max. | Unug | |
| Joogta ah | |||||||
| V(BR)DSS | Korontada Burburinta Biyaha-Isha | VGS = 0V, ID = 250μA | 60 | V | |||
| IDSS | Eber Albaabka Voltage Daaditaanka Hadda | VDS = 48 V, VGS = 0V | 1 | µA | |||
| TJ=85°C | 30 | ||||||
| IGSS | Ka Bixinta Albaabka Hadda | VGS = ± 20V, VDS = 0V | ± 100 | nA | |||
| On Tilmaamaha | |||||||
| VGS(TH) | Gate Threshold Voltage | VGS = VDS, IDS = 250µA | 1 | 1.6 | 2.5 | V | |
| RDS (daran)d | Biyo-Daan-Isha Iska-caabbinta Gobolka | VGS = 10V, ID = 25A | 14 | 17.5 | mΩ | ||
| VGS = 4.5V, ID = 20A | 19 | 22 | mΩ | ||||
| Wareegid | |||||||
| Qg | Wadarta Kharashka Albaabka | VDS=30V VGS=10V Aqoonsi=25A | 42 | nC | |||
| Qgs | Albaab-Dhaanaanta | 6.4 | nC | ||||
| Qgd | Kharashka Gate-Drain | 9.6 | nC | ||||
| td (daar) | Waqtiga daahitaanka ee daar | VGEN=10V VDD=30V ID=1A RG=6Ω RL=30Ω | 17 | ns | |||
| tr | Daar-On Rise Time | 9 | ns | ||||
| td (off) | Waqtiga dib u dhigista demi | 58 | ns | ||||
| tf | Deminta Xilliga Dayrta | 14 | ns | ||||
| Rg | Iska caabin Gat | VGS=0V, VDS=0V, f=1MHz | 1.5 | Ω | |||
| Firfircoon | |||||||
| Ciise | In Capacitance | VGS=0V VDS=30V f=1MHz | 2100 | pF | |||
| Coss | Awood ka baxsan | 140 | pF | ||||
| Crss | Awoodda Wareejinta Dib u celinta | 100 | pF | ||||
| Sifooyinka Diode-Source Diode iyo Qiimaynta ugu badan | |||||||
| IS | Isha Joogtada ah ee Hadda | VG=VD=0V , Xoog hadda | 18 | A | |||
| ISM | Isha Pulsed Current3 | 35 | A | ||||
| VSDd | Diode Forward Voltage | ISD = 20A, VGS=0V | 0.8 | 1.3 | V | ||
| trr | Wakhtiga Soo kabashada | ISD=25A, dlSD/dt=100A/µs | 27 | ns | |||
| Qrr | Dib u Celinta Lacagta Soo Kabashada | 33 | nC | ||||
