WSD6060DN56 N-channel 60V 65A DFN5X6-8 WINSOK MOSFET

sharaxaad gaaban:

Lambarka Qaybta:WSD6060DN56

BVDSS:60V

AQOONSI:65A

RDSON:7.5mΩ

Kanaalka:N-channel

XidhmadaDFN5X6-8

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WINSOK MOSFET dulmarka alaabta

Korantada WSD6060DN56 MOSFET waa 60V, hadda waa 65A, iska caabintuna waa 7.5mΩ, Kanaalka waa N-channel, xirmooyinkuna waa DFN5X6-8.

WINSOK MOSFET meelaha codsiga

MOSFET sigaarka elektaroonigga ah, ku dallacaadda wireless MOSFET, matoorada MOSFET, drones MOSFET, daryeelka caafimaadka MOSFET, xajiyeyaasha baabuurta MOSFET, kontaroolayaasha MOSFET, alaabta dhijitaalka ah MOSFET, qalabka guryaha yar MOSFET, elektarooniga macaamiisha MOSFET.

WINSOK MOSFET waxay u dhigantaa lambarada alaabta summada kale

STMicroelectronics MOSFET STL5DN6F7.PANJIT MOSFET PSMQC73N6NS1.POTENS Semiconductor MOSFET PDC696X.

Qiyaasta MOSFET

Astaanta	Halbeegga		Qiimaynta	Unug
Qiimaynta Caadiga ah
VDSS	Qulqulka-Isha Voltage		60	V
VGSS	Gate-Source Voltage		±20	V
T_J	Heerkulka ugu sarreeya ee isgoyska		150	°C
TSTG	Heerkulka Heerkulka ee Kaydinta		-55 ilaa 150	°C
I_S	Diode Horumarka Joogtada ah ee Hadda	T_c=25°C	30	A
ID	Biyo-mareenka Joogtada ah ee Hadda	T_c=25°C	65	A
ID	Biyo-mareenka Joogtada ah ee Hadda	T_c=70°C	42	A
I DM b	Dhiigbaxa garaaca wadnaha ayaa la tijaabiyay	T_c=25°C	250	A
P_D	Korontada ugu sarreysa	T_c=25°C	62.5	W
P_D	Korontada ugu sarreysa	T_C=70°C	38	W
R_qJL	Iska caabinta kulaylka-Isgoysyada Hogaaminta	Gobolka joogta	2.1	°C/W
RqJA	Iska caabinta kulaylka-Isgoysyada Ambient	t £ 10s	45	°C/W
RqJA	Iska caabinta kulaylka-Isgoysyada Ambient	Gobolka joogta^b	50	°C/W
I AS^d	Avalanche Current, Hal garaac	L=0.5mH	18	A
E AS d	Avalanche Energy, Hal garaaca wadnaha	L=0.5mH	81	mJ

Astaanta	Halbeegga	Xaaladaha Imtixaanka		Min.	Nooca	Max.	Unug
Astaamaha Joogtada ah
BV_DSS	Korontada Burburinta Biyaha-Isha	V_GS= 0V, I_DS=250mA		60	-	-	V
IDSS	Eber Albaabka Voltage Daaditaanka Hadda	V_DS= 48V, V_GS=0V		-	-	1	mA
IDSS	Eber Albaabka Voltage Daaditaanka Hadda						mA
			T_J=85°C	-	-	30
VGS(th)	Gate Threshold Voltage	V_DS=V_GS, I_DS=250mA		1.2	1.5	2.5	V
IGSS	Ka Bixinta Albaabka Hadda	V_GS= 20V, V_DS=0V		-	-	± 100	nA
R DS(ON) 3	Biyo-Daan-Isha Iska-caabbinta Gobolka	V_GS= 10V, I_DS=20A		-	7.5	10	m W
R DS(ON) 3	Biyo-Daan-Isha Iska-caabbinta Gobolka	V_GS=4.5V, I_DS=15 A		-	10	15	m W
Tilmaamaha Diode
V SD	Diode Forward Voltage	I_SD= 1A, V_GS=0V		-	0.75	1.2	V
t_rr	Wakhtiga Soo kabashada	I_SD=20A, dl_SD/dt=100A/µs		-	42	-	ns
Q_rr	Dib u Celinta Lacagta Soo Kabashada	I_SD=20A, dl_SD/dt=100A/µs		-	36	-	nC
Tilmaamaha Dhaqdhaqaaqa^3,4
R_G	Iska caabinta Albaabka	V_GS=0V,V_DS=0V,F=1MHz		-	1.5	-	W
C_iss	Awood-gelinta wax-soo-gelinta	V_GS=0V, V_DS= 30V, F=1.0MHz Ω		-	1340	-	pF
C_oss	Awoodda wax-soo-saarka			-	270	-
C_rss	Awoodda Wareejinta Dib u celinta			-	40	-
td(ON)	Waqtiga daahitaanka ee daar	VDD=30V, IDS=1A, VGEN=10V, RG=6Ω.		-	15	-	ns
t_r	Daar-On Rise Time			-	6	-
td (Dami)	Waqtiga dib u dhigista demi			-	33	-
t_f	Deminta wakhtiga dayrta			-	30	-
Tilmaamaha Lacagta Albaabka ^3,4
Q_g	Wadarta Kharashka Albaabka	V_DS= 30V, V_GS=4.5V, I_DS=20A		-	13	-	nC
Q_g	Wadarta Kharashka Albaabka	V_DS= 30V, V_GS= 10V, I_DS=20A		-	27	-
Q_gth	Kharashka Albaabka laga galo			-	4.1	-
Q_gs	Kharashka Albaabka-Isha			-	5	-
Q_gd	Kharashka Gate-Drain			-	4.2	-