WSD75100DN56 N-channel 75V 100A DFN5X6-8 WINSOK MOSFET

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WSD75100DN56 N-channel 75V 100A DFN5X6-8 WINSOK MOSFET

sharaxaad gaaban:

Lambarka Qaybta:WSD75100DN56

BVDSS:75V

Aqoonsiga:100A

RDSON:5.3mΩ 

Kanaalka:N-channel

XidhmadaDFN5X6-8


Faahfaahinta Alaabta

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WINSOK MOSFET dulmarka alaabta

Korantada WSD75100DN56 MOSFET waa 75V, hadda waa 100A, iska caabintuna waa 5.3mΩ, kanaalka waa N-channel, xirmooyinkuna waa DFN5X6-8.

WINSOK MOSFET meelaha codsiga

Sigaarka elektaroonigga ah MOSFET, ku dallacaadda wireless MOSFET, drones MOSFET, daryeelka caafimaadka MOSFET, xajiyeyaasha baabuurta MOSFET, kontaroolayaasha MOSFET, alaabada dhijitaalka ah MOSFET, qalabka guryaha yar yar MOSFET, elektarooniga macaamiisha MOSFET.

WINSOK MOSFET waxay u dhigantaa lambarada alaabta summada kale

AOS MOSFET AON6276,AON6278,AON628,AON6282,AON6448.Onsemi,FAIRCHILD MOSFET NVMFS6H824N.STMicroelectronics MOSFET STL1N8F7.INFINEON,IR MOSFET BSC42NE7NS3TE7GNS X.

Qiyaasta MOSFET

Astaanta

Halbeegga

Qiimaynta

Unugyo

VDS

Qulqulka-Isha Voltage

75

V

VGS

Albaabka-Sourwaa Voltage

±25

V

TJ

Heerkulka ugu sarreeya ee isgoyska

150

°C

ID

Heerkulka Heerkulka ee Kaydinta

-55 ilaa 150

°C

IS

Diode Horumarka Joogtada ah ee Hadda,TC=25°C

50

A

ID

Biyo-mareen joogto ah, VGS=10V,TC=25°C

100

A

Biyo-mareen joogto ah, VGS=10V,TC=100°C

73

A

IDM

Biyo-mareenka hadda jira,TC=25°C

400

A

PD

Korontada ugu badan ee Burburinta,TC=25°C

155

W

Korontada ugu badan ee Burburinta,TC=100°C

62

W

RθJA

Iska caabinta kulaylka-Isgoysyada Ambient ,t =10s ̀

20

°C

Iska caabinta kulaylka-Isgoysyada Ambient, Gobolka Joogtada ah

60

°C

RqJC

Iska caabinta kulaylka-Isgoysyada Kiis

0.8

°C

IAS

Avalanche Current, Hal garaac, L=0.5mH

30

A

EAS

Tamarta Avalanche, Hal garaac, L=0.5mH

225

mJ

 

Astaanta

Halbeegga

Shuruudaha

Min.

Nooca

Max.

Unug

BVDSS

Korontada Burburinta Biyaha-Isha VGS= 0V, ID= 250 uA

75

---

---

V

BVDSS/△TJ

BVDSSIsku xidhka heerkulka Tixraaca 25, ID=1mA

---

0.043

---

V/

RDS(ON)

Dheecaan-Isha Joogta ah ee Iska-caabbinta2 VGS=10V, ID=25A

---

5.3

6.4

mΩ

VGS(th)

Gate Threshold Voltage VGS=VDS, ID= 250 uA

2.0

3.0

4.0

V

VGS(th)

VGS(th)Isku xidhka heerkulka

---

-6.94

---

mV/

IDSS

Biyo-Diidinta-Isha Hadda VDS= 48V, VGS= 0V , TJ=25

---

---

2

uA

VDS= 48V, VGS= 0V , TJ=55

---

---

10

IGSS

Ka Daadsanaanta Iridda-Isha Hadda VGS=±20V, VDS=0V

---

---

±100

nA

gfs

Transconductance hore VDS= 5V, ID=20A

---

50

---

S

Rg

Iska caabinta Albaabka VDS= 0V, VGS=0V , f=1Mhz

---

1.0

2

Ω

Qg

Wadarta Kharashka Albaabka (10V) VDS= 20V, VGS= 10V, ID=40A

---

65

85

nC

Qgs

Kharashka Albaabka-Isha

---

20

---

Qgd

Kharashka Gate-Drain

---

17

---

Td (daar)

Daar-Daahista Waqtiga VDD= 30V, VGEN= 10V , RG=1Ω, ID=1A,RL=15Ω.

---

27

49

ns

Tr

Waqtiga Kaca

---

14

26

Td (off)

Wakhtiga dib u dhigista demi

---

60

108

Tf

Waqtiga Dayrta

---

37

67

Ciss

Awood-gelinta wax-soo-gelinta VDS= 20V, VGS=0V , f=1Mhz

3450

3500 4550

pF

Coss

Awoodda wax-soo-saarka

245

395

652

Crss

Awoodda Wareejinta Dib u celinta

100

195

250


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