WSP4447 P-Channel -40V -11A SOP-8 WINSOK MOSFET

sharaxaad gaaban:

Nambarka Qaabka:WSP4447

BVDSS:-40V

RDSON:13mΩ

Aqoonsiga:-11A

Kanaalka:P-Channel

Xidhmada:SOP-8

Badeecada Xagaaga:Awoodda WSP4447 MOSFET waa -40V, hadda waa -11A, iska caabintuna waa 13mΩ, kanaalka waa P-Channel, xirmooyinkuna waa SOP-8.

Codsiyada:Sigaarka elektarooniga ah, dabaysha wireless-ka, matoorada, diyaaradaha aan duuliyaha lahayn, aaladaha caafimaadka, dabaylaha baabuurta, kontaroolayaasha, alaabada dhijitaalka ah, qalabka yar yar, iyo agabka elektiroonigga ah ee macaamiisha.

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Sharaxaada Guud

WSP4447 waa MOSFET waxqabadka ugu sarreeya ee adeegsada tignoolajiyada trench oo leh cufnaanta unugyada sare. Waxay bixisaa RDSON heer sare ah iyo kharashka albaabka, taasoo ka dhigaysa mid ku habboon in loo isticmaalo badi codsiyada beddelka buck-ka. WSP4447 waxay la kulmeysaa RoHS iyo heerarka Alaabta Cagaaran, waxayna la socotaa 100% EAS dammaanad qaadka kalsoonida buuxda.

Astaamaha

Tiknoolajiyada horumarsan ee Trench waxay u ogolaataa cufnaanta unugyada sare, taasoo keentay Aaladda Cagaaran oo leh Super Low Gate Charge iyo hoos u dhaca saamaynta CdV/dt.

Codsiyada

Beddelka Soo noqnoqoshada Sare ee Noocyada Elektarooniga ah
Beddelahan waxaa loogu talagalay inuu si hufan u awoodo qalabyo kala duwan, oo ay ku jiraan laptops, consoles-yada ciyaarta, qalabka isku xirka, sigaarka elektaroonigga ah, xajiyeyaasha wireless-ka, matoorada, diyaaradaha aan duuliyaha lahayn, aaladaha caafimaadka, xajiyeyaasha baabuurta, kontaroolayaasha, alaabada dhijitaalka ah, qalabka guriga yar, iyo macaamiisha. elektarooniga

lambarka alaabta u dhigma

AOS AO4425 AO4485,ON FDS4675,VISHAY Si4401FDY,ST STS10P4LLF6,TOSHIBA TPC8133,PANJIT PJL9421,Sinopower SM4403PSK,RUICHIPS RU40L10H.

Halbeegyada muhiimka ah

Astaanta	Halbeegga	Qiimaynta	Unugyo
VDS	Qulqulka-Isha Voltage	-40	V
VGS	Gate-Source Voltage	±20	V
ID@TA=25℃	Biyo-bax joogto ah oo socda, VGS @ -10V1	-11	A
ID@TA=70℃	Biyo-bax joogto ah oo socda, VGS @ -10V1	-9.0	A
IDM a	300µs Dheecaan Jiif ah (VGS=-10V)	-44	A
EAS b	Tamarta Avalanche, Hal garaac (L=0.1mH)	54	mJ
IAS b	Burburka Hadda, Hal garaaca (L=0.1mH)	-33	A
PD@TA=25℃	Wadarta Korontada Bakhtiinta4	2.0	W
TSTG	Heerkulka Heerkulka ee Kaydinta	-55 ilaa 150	℃
TJ	Heerkulka Heerkulka ee Isgoyska	-55 ilaa 150	℃

Astaanta	Halbeegga	Shuruudaha	Min.	Nooca	Max.	Unug
BVDSS	Korontada Burburinta Biyaha-Isha	VGS=0V , ID=-250uA	-40	---	---	V
△BVDSS/△TJ	Heerkulka BVDSS	Tixraaca 25℃, ID=-1mA	---	-0.018	---	V/℃
RDS(ON)	Dheecaan-Isha Joogta ah ee Iska-caabbinta2	VGS=-10V , ID=-13A	---	13	16	mΩ
RDS(ON)	Dheecaan-Isha Joogta ah ee Iska-caabbinta2					mΩ
		VGS=-4.5V , ID=-5A	---	18	26
VGS(th)	Gate Threshold Voltage	VGS=VDS , ID = -250uA	-1.4	-1.9	-2.4	V
		VGS=VDS , ID = -250uA
△VGS(th)	VGS(th) Iskuxidhka Heerkulka		---	5.04	---	mV/℃
IDSS	Biyo-Diidinta-Isha Hadda	VDS=-32V, VGS=0V, TJ=25℃	---	---	-1	uA
IDSS	Biyo-Diidinta-Isha Hadda					uA
		VDS=-32V, VGS=0V, TJ=55℃	---	---	-5
IGSS	Ka Daadsanaanta Iridda-Isha Hadda	VGS=±20V, VDS=0V	---	---	± 100	nA
gfs	Transconductance hore	VDS=-5V , ID=-10A	---	18	---	S
Qg	Wadarta Kharashka Albaabka (-4.5V)	VDS=-20V , VGS=-10V , ID=-11A	---	32	---	nC
Qgs	Kharashka Albaabka-Isha		---	5.2	---
Qgd	Kharashka Gate-Drain		---	8	---
Td (daar)	Daar-Daahista Waqtiga	VDD=-20V , VGS=-10V , RG=6Ω, ID=-1A ,RL=20Ω	---	14	---	ns
Tr	Waqtiga Kaca		---	12	---
Td (off)	Wakhtiga dib u dhigista demi		---	41	---
Tf	Waqtiga Dayrta		---	22	---
Ciise	Awood-gelinta wax-soo-gelinta	VDS=-15V , VGS=0V , f=1Mhz	---	1500	---	pF
Coss	Awoodda wax-soo-saarka		---	235	---
Crss	Awoodda Wareejinta Dib u celinta		---	180	---