WST2011 Dual P-Channel -20V -3.2A SOT-23-6L WINSOK MOSFET

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WST2011 Dual P-Channel -20V -3.2A SOT-23-6L WINSOK MOSFET

sharaxaad gaaban:


  • Nambarka Qaabka:WST2011
  • BVDSS:-20V
  • RDSON:80mΩ
  • Aqoonsiga:-3.2A
  • Kanaalka:Labada P-Channel
  • Xidhmada:SOT-23-6L
  • Badeecada Xagaaga:Awoodda WST2011 MOSFET waa -20V, hadda waa -3.2A, iska caabintuna waa 80mΩ, kanaalka waa Dual P-Channel, xirmadu waa SOT-23-6L.
  • Codsiyada:Sigaarka elektaroonigga ah, kontaroolada, alaabada dhijitaalka ah, qalabyada yaryar, madadaalada guriga.
  • Faahfaahinta Alaabta

    Codsiga

    Tags Product

    Sharaxaada Guud

    MOSFET-yada WST2011 waa kuwa ugu horumarsan ee P-ch transistor ee la heli karo, oo wata cufnaanta unugyada aan la tartamin. Waxay bixiyaan waxqabad aan caadi ahayn, oo leh RDSON hoose iyo kharashka albaabka, taasoo ka dhigaysa inay ku habboon yihiin beddelka tamarta yar iyo codsiyada beddelka. Intaa waxaa dheer, WST2011 waxay la kulmeysaa RoHS iyo heerarka Alaabta Cagaaran waxayna ku faantaa ogolaanshaha isku halaynta shaqada oo buuxda.

    Astaamaha

    Tiknoolajiyada horumarsan ee Trench waxay u ogolaataa cufnaanta unugyada sare, taasoo keentay Aaladda Cagaaran oo leh Super Low Gate Charge iyo hoos u dhaca saamaynta CdV/dt.

    Codsiyada

    Beddelka korantada yar-yar ee isku-dhafan ee soo noqnoqoshada badan waxay ku habboon tahay in lagu isticmaalo MB/NB/UMPC/VGA, isku xidhka nidaamyada korantada DC-DC, furayaasha rarka, sigaarka elektaroonigga ah, kontaroolayaasha, alaabada dhijitaalka ah, qalabka guriga ee yaryar, iyo elektiroonigga macaamiisha .

    lambarka alaabta u dhigma

    Ku dul yaal FDC634P,VISHAY Si3443DDV,NXP PMDT670UPE,

    Halbeegyada muhiimka ah

    Astaanta Halbeegga Qiimaynta Unugyo
    10s Gobolka Jooga
    VDS Qulqulka-Isha Voltage -20 V
    VGS Gate-Source Voltage ±12 V
    ID@TA=25℃ Biyo-bax joogto ah oo socda, VGS @ -4.5V1 -3.6 -3.2 A
    ID@TA=70℃ Biyo-bax joogto ah oo socda, VGS @ -4.5V1 -2.6 -2.4 A
    IDM Daadi Jiifka Hadda2 -12 A
    PD@TA=25℃ Isku geynta Korontada 3 1.7 1.4 W
    PD@TA=70℃ Isku geynta Korontada 3 1.2 0.9 W
    TSTG Heerkulka Heerkulka ee Kaydinta -55 ilaa 150
    TJ Heerkulka Heerkulka ee Isgoyska -55 ilaa 150
    Astaanta Halbeegga Shuruudaha Min. Nooca Max. Unug
    BVDSS Korontada Burburinta Biyaha-Isha VGS=0V , ID=-250uA -20 --- --- V
    △BVDSS/△TJ Heerkulka BVDSS Tixraaca 25℃, ID=-1mA --- -0.011 --- V/℃
    RDS(ON) Dheecaan-Isha Joogta ah ee Iska-caabbinta2 VGS=-4.5V , ID=-2A --- 80 85
           
        VGS=-2.5V , ID=-1A --- 95 115  
    VGS(th) Gate Threshold Voltage VGS=VDS , ID = -250uA -0.5 -1.0 -1.5 V
               
    △VGS(th) VGS(th) Iskuxidhka Heerkulka   --- 3.95 --- mV/℃
    IDSS Biyo-Diidinta-Isha Hadda VDS=-16V, VGS=0V, TJ=25℃ --- --- -1 uA
           
        VDS=-16V, VGS=0V, TJ=55℃ --- --- -5  
    IGSS Ka Daadsanaanta Iridda-Isha Hadda VGS=±12V, VDS=0V --- --- ± 100 nA
    gfs Transconductance hore VDS=-5V , ID=-2A --- 8.5 --- S
    Qg Wadarta Kharashka Albaabka (-4.5V) VDS=-15V , VGS=-4.5V , ID=-2A --- 3.3 11.3 nC
    Qgs Kharashka Albaabka-Isha --- 1.1 1.7
    Qgd Kharashka Gate-Drain --- 1.1 2.9
    Td (daar) Daar-Daahista Waqtiga VDD=-15V , VGS=-4.5V ,

    RG=3.3Ω, ID=-2A

    --- 7.2 --- ns
    Tr Waqtiga Kaca --- 9.3 ---
    Td (off) Wakhtiga dib u dhigista demi --- 15.4 ---
    Tf Waqtiga Dayrta --- 3.6 ---
    Ciise Awood-gelinta wax-soo-gelinta VDS=-15V , VGS=0V , f=1Mhz --- 750 --- pF
    Coss Awoodda wax-soo-saarka --- 95 ---
    Crss Awoodda Wareejinta Dib u celinta --- 68 ---

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