Xidhmada Weyn MOSFET Wareegga Darawalka

Marka hore, MOSFET nooca iyo qaab-dhismeedka.MOSFETwaa FET (mid kale waa JFET), waxaa loo soo saari karaa nooc la xoojiyey ama nooc ka sii dartay, P-channel ama N-channel wadar ahaan afar nooc, laakiin codsiga dhabta ah ee kaliya ee la xoojiyay N-channel MOSFETs iyo P-channel MOSFETs, sidaa darteed Caadi ahaan loo yaqaan NMOS ama PMOS ayaa tilmaamaya labadan nooc. Labadan nooc ee MOSFET-yada la xoojiyey, inta badan la isticmaalo waa NMOS, sababtuna waa in iska caabintu ay yar tahay, oo ay fududahay in la soo saaro. Sidaa darteed, NMOS waxaa guud ahaan loo adeegsadaa beddelidda sahayda korontada iyo codsiyada wadista baabuurta.

Hordhaca soo socda, inta badan kiisaska waxaa u badan NMOS. awoodda dulinku waxay u dhaxaysaa saddexda biin ee MOSFET, oo ah muuqaal aan loo baahnayn balse soo ifbaxaysa xaddidaadda habka wax-soo-saarka. Joogitaanka awoodda dulinku waxay ka dhigaysaa xoogaa dhib badan in la naqshadeeyo ama la doorto wareegga darawalka. Waxaa jira diode dulin ah oo u dhexeeya qulqulka iyo isha. Tan waxaa loo yaqaannaa diode-jidhka waxayna muhiim u tahay wadista rarka wax-qabadka leh sida matoorada. Jid ahaan, diode jidhku waxa uu ku jiraa MOSFET-yada gaarka ah oo inta badan kuma jiro gudaha chip IC.

MOSFETBeddelida luminta tuubada, ha ahaato NMOS ama PMOS, ka dib marka la sameeyo iska caabbinta, si markaas hadda uu u isticmaalo tamar iska caabbintan, qaybtan tamarta la isticmaalo waxaa loo yaqaannaa luminta conduction. Xulashada MOSFET-yada leh iska caabbinta hooseeya waxay yaraynaysaa khasaaraha iska caabbinta. Maalmahan, iska caabbinta MOSFET-yada awoodda yar waxay guud ahaan ku dhowdahay tobanaan milyohms, iyo dhawr milyan ayaa sidoo kale la heli karaa. MOSFET-yada waa in aan la dhammayn isla markiiba marka ay shidmaan iyo marka ay shidmaan. Waxa jira hab lagu dhimayo tamarta Labada daraf ee MOSFET, waxaana jira hannaan lagu kordhinayo qulqulka hadda dhex socda. Muddadaas, khasaaraha MOSFET waa wax soo saarka tamarta iyo hadda, kaas oo loo yaqaan luminta beddelka. Caadiyan luminta wareejintu aad ayey uga weyn tahay luminta taarikhda, mar kasta oo inta jeer ee beddelka ay si degdeg ah u socoto, waa sii weynaada khasaaraha. Wax soo saarka danab iyo hadda ee isla markaaba waa mid aad u weyn, taasoo keentay khasaare weyn. Gaabinta wakhtiga beddelka waxay yaraynaysaa lumitaanka habdhaqan kasta; dhimista inta jeer ee beddelka waxay yaraynaysaa tirada furayaasha halbeeg kasta. Labadan habba waxay yareeyaan khasaaraha beddelka.

Marka la barbar dhigo laba-cirifoodka transistors, waxaa guud ahaan la rumeysan yahay in aan hadda loo baahnayn si loo sameeyo aMOSFETdhaqan, ilaa inta korantada GS uu ka sarreeyo qiimo gaar ah. Tani way fududahay in la sameeyo, si kastaba ha ahaatee, waxaan sidoo kale u baahanahay xawaare. Sida aad ka arki karto qaab dhismeedka MOSFET, waxaa jira awood dulin ah oo u dhexeysa GS, GD, wadista MOSFET, dhab ahaantii, dallacaadda iyo soo saarista awoodda. Ku dallacaadda capacitor-ku waxa ay u baahan tahay hadda, sababtoo ah ku dallaca capacitor-ka isla markiiba waxa loo arki karaa wareeg gaaban, sidaa awgeed wakhtiga degdega ahi wuu sarreeyaa. Waxa ugu horreeya ee la xuso marka la dooranayo/nakhshadeynayo darawalka MOSFET waa cabbirka wakhtiga wareegga gaaban ee degdegga ah ee la bixin karo.

Waxa labaad ee in la xuso waa in, guud ahaan loo isticmaalo in darawalka-dhamaadka sare NMOS, danab albaabka waqtiga-waqtiga u baahan yahay inuu ka weyn yahay danab isha. High-dhamaadka drive MOSFET on danab isha iyo dheecaan (VCC) isku mid ah, markaas danab albaabka ka badan VCC 4V ama 10V. haddii nidaamka isku mid ah, si aad u hesho danab ka weyn VCC ah, waxaan u baahannahay in aan ku takhasusay wareegga boost. Darawallo badan oo matoorrada ayaa leh bambooyin isku dhafan, waxaa muhiim ah in la ogaado in aad dooratid awoodda dibadda ee ku habboon si aad u hesho xawaare gaaban oo gaaban oo ku filan MOSFET. 4V ama 10V waa MOSFET-ka caadiga ah ee loo isticmaalo danabka, naqshadeynta dabcan, waxaad u baahan tahay inaad leedahay xad gaar ah. Kolka uu korontadu sarreeyo, xawaaraha gobolka ayaa si degdeg ah u kordha, waxaana hoos u dhacaya iska caabbinta gobolka. Hadda waxaa sidoo kale jira MOSFET koronto yar oo gobolka loo isticmaalo meelo kala duwan, laakiin nidaamka 12V baabuurta elektarooniga ah, guud ahaan 4V on-state waa ku filan.MOSFETs feature ugu caansan waa sifooyinka beddelka ee wanaagsan, sidaas darteed waxaa si ballaaran loo isticmaalaa in baahida loo qabo wareegyada beddelka elektarooniga ah, sida beddelka sahayda korantada iyo wadista matoorka, laakiin sidoo kale iftiinka iftiinka. Qabashada macneheedu waa u shaqaynta sida beddelka, taas oo u dhiganta xidhidhiyaha furaha. Sifooyinka NMOS, Vgs ka weyn qiime cayiman ayaa qaban doona, oo ku habboon in loo isticmaalo kiiska marka isha laga soo xigtay (wadista hoose), ilaa iyo inta albaabka Voltage of 4V ama 10V.PMOS sifooyinka, Vgs ka yar qiimo gaar ah ayaa qaban doona, ku haboon in loo isticmaalo kiiska marka isha ku xiran tahay VCC ah (sare-dhamaadka drive). Si kastaba ha ahaatee, inkasta oo PMOS si fudud loo isticmaali karo darawal sare oo sare, NMOS waxaa badanaa loo isticmaalaa darawalada dhamaadka sare sababtoo ah caabbinta weyn, qiimaha sare, iyo noocyo yar oo beddel ah.

Hadda MOSFET waxay waddaa codsiyada korantada yar, marka la isticmaalo sahayda korantada ee 5V, markan haddii aad isticmaasho qaab-dhismeedka totem-ka caadiga ah, sababtoo ah transistor-ku wuxuu noqonayaa qiyaastii 0.7V korantada, taasoo keentay finalka dhabta ah ee lagu daray albaabka danabku waa kaliya 4.3 V. Waqtigaan, waxaan dooraneynaa korantada albaabka magaca ee 4.5V MOSFET ee jiritaanka khataraha qaarkood. Dhibaato la mid ah waxay ku dhacdaa isticmaalka 3V ama dhacdooyinka kale ee korontada yar yar. Dual voltages waxaa loo isticmaalaa wareegyada kantaroolka qaarkood halkaasoo qaybta macquulka ah ay isticmaasho 5V ama 3.3V danab dhijitaal ah oo caadi ah iyo qaybta korantadu waxay isticmaashaa 12V ama xitaa ka sareeya. Labada danab waxay ku xiran yihiin dhul ay wadaagaan. Tani waxay dhigaysaa shuruud ah in la isticmaalo wareeg ah oo u oggolaanaysa dhinaca korantada hooseeya inay si wax ku ool ah u maamusho MOSFET dhinaca tamarta sare, halka MOSFET ee dhinaca tamarta sare ay la kulmi doonto isla dhibaatooyinka lagu sheegay 1 iyo 2. Dhammaan saddexda xaaladood, Qaab dhismeedka cirifka totem ma buuxin karo shuruudaha wax soo saarka, qaar badan oo ka mid ah MOSFET darawalka ICs uma eka inay ku jiraan qaab-dhismeedka xaddidaya danabka albaabka. Korontada wax gelinta ma aha qiime go'an, way ku kala duwan tahay waqtiga ama arrimo kale. Kala duwanaanshiyahani wuxuu keenaa in korantada wadista ee MOSFET ee wareegga PWM ay noqoto mid aan degganayn. Si MOSFET looga dhigo mid ka badbaadsan danabyada albaabka sare, MOSFETs badan ayaa leh nidaamiyayaal danab ku dhex dhisan si ay si xoog ah u xaddidaan baaxadda danabka albaabka.

Xaaladdan oo kale, marka korantada darawalka ee la bixiyay uu ka sarreeyo korantada maamulaha, waxay keeni doontaa isticmaalka korantada weyn ee joogtada ah Isla mar ahaantaana, haddii aad si fudud u isticmaasho mabda'a qaybiyaha danabka iska caabinta si loo yareeyo danabka iridda, waxaa jiri doona xad yar. Korontada wax-soo-saarka sare, MOSFET-du si fiican ayey u shaqeysaa, halka korantada wax-soo-gelinta la dhimo marka korantada albaabka ay ku filnaan weydo inay keento koronto aan ku filneyn, sidaas darteedna kordhinaysa isticmaalka korontada.

Wareegga caadiga ah halkan kaliya ee wareegga darawalka NMOS si uu u sameeyo falanqayn sahlan: Vl iyo Vh waa tamarta hoose ee hoose iyo sare, siday u kala horreeyaan, labada korantadu waxay noqon karaan isku mid, laakiin Vl waa inaysan dhaafin Vh. Q1 iyo Q2 waxay sameeyaan tiir totem ah oo rogan, oo loo isticmaalo in lagu gaaro go'doominta, isla mar ahaantaana si loo hubiyo in labada tuubbo ee darawalka Q3 iyo Q4 aysan isku mar wada socon doonin. R2 iyo R3 waxay bixiyaan tixraaca korantada ee PWM, iyo adigoo bedelaya tixraaca, waxaad ka dhigi kartaa wareegga si fiican u shaqeeyo, iyo korantada albaabka kuma filna in ay keento habdhaqan dhamaystiran, sidaas darteed kordhinta isticmaalka korontada. R2 iyo R3 waxay bixiyaan tixraaca korantada PWM, adoo bedelaya tixraacan, waxaad u ogolaan kartaa wareegga shaqada ee qaabka mowjadda calaamada PWM waa meel qumman oo toosan. Q3 iyo Q4 waxaa loo isticmaalaa in lagu bixiyo darawalka hadda, sababtoo ah waqtiga-waqtiga, Q3 iyo Q4 marka loo eego Vh iyo GND waa ugu yaraan hoos u dhaca Vce, hoos u dhaca danabku badanaa waa 0.3V ama wax ka badan, aad uga hooseeya In ka badan 0.7V Vce R5 iyo R6 waa resistors-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin-celin ah muunad waxaa loo isticmaalaa in danab albaabka. R5 iyo R6 waa jawaab celin celin loo isticmaalo in lagu muunadeeyo danabka albaabka, ka dibna loo sii maro Q5 si loo abuuro jawaab celin taban oo xoog leh oo ku saabsan saldhigyada Q1 iyo Q2, sidaas darteed xaddidaya tamarta albaabka ilaa qiimo xaddidan. Qiimahan waxaa lagu hagaajin karaa R5 iyo R6. Ugu dambeyntii, R1 waxay bixisaa xaddidaadda saldhigga hadda ee Q3 iyo Q4, iyo R4 waxay bixisaa xaddidaadda albaabka hadda MOSFETs, taas oo ah xaddididda Barafka Q3Q4. Capacitor-ka dardargelinta waxa lagu xidhi karaa si barbar socda R4 haddii loo baahdo.

Marka la naqshadeynayo aaladaha la qaadi karo iyo alaabada wireless, hagaajinta waxqabadka badeecada iyo kordhinta waqtiga hawlgalka batteriga waa laba arrimood oo naqshadeeyayaasha u baahan yihiin inay wajihi karaan qalabka.

Beddelayaasha DC-DC waxay leeyihiin faa'iidooyinka waxtarka sare leh, wax soo saarka sare ee hadda jira iyo hadda quiescent hooseeya, kuwaas oo aad ugu habboon tamarta qalabka la qaadi karo. Waqtigan xaadirka ah, isbeddellada ugu muhiimsan ee horumarinta tignoolajiyada naqshadaynta beddelka DC-DC waxaa ka mid ah: tignoolajiyada soo noqnoqda sare leh: kororka soo noqnoqda beddelka, cabbirka beddelka beddelka sidoo kale waa la dhimay, cufnaanta awoodda ayaa si weyn loo kordhiyay, iyo firfircoonida jawaabta waa la hagaajiyay. Yar

Awood beddelka DC-DC inta jeer ee beddelka waxay kor u kici doontaa heerka megahertz. Tiknoolajiyada wax soo saarka hooseeya: Iyada oo horumarinta joogtada ah ee tignoolajiyada wax soo saarka semiconductor, microprocessors iyo qalabka elektiroonigga ah ee la qaadan karo ee korantada ku shaqeeya ayaa sii yaraanaya oo hoos u dhacaya, taas oo u baahan mustaqbalka DC-DC beddelka ayaa bixin kara danab wax soo saar hooseeya si uu ula qabsado microprocessor-ka iyo qalabka elektiroonigga ah ee la qaadan karo, kaas oo waxay u baahan tahay mustaqbalka DC-DC beddelaha ayaa bixin kara danab wax soo saar hooseeya si uu ula qabsado microprocessor-ka.

Ku filan in la bixiyo koronto yar oo wax soo saarka si ay ula qabsato microprocessors iyo qalabka elektarooniga ah ee la qaadi karo. Horumarintan tignoolajiyadeed waxay soo bandhigtay shuruudo sare oo loogu talagalay naqshadaynta wareegyada qalabka korontada. Ugu horreyntii, iyada oo korodhka isbeddelka sii kordhaya, waxqabadka qaybaha beddelka ayaa la soo bandhigayaa

Shuruudaha sare ee waxqabadka curiyaha beddelka, waana inuu lahaadaa wareegga wareegga curiyaha beddelka ee u dhigma si loo hubiyo in curiyaha beddelka ee inta jeer ee beddelka uu gaaro heerka megahertz ee hawlgalka caadiga ah. Marka labaad, qalabka elektarooniga ah ee la qaadan karo ee baytari ku shaqeeya, korantada ku shaqaynaysa wareeggu waa yar tahay (tusaale ahaan baytariyada lithium).

Baytariyada lithium, tusaale ahaan, danab shaqeeya ee 2.5 ~ 3.6V), sidaas darteed chip sahayda korontada ee danab hoose.

MOSFET waxay leedahay iska caabin aad u hooseeya, isticmaalka tamar yar, wakhtigan xaadirka ah ee waxtarka sare leh ee DC-DC chip MOSFET ka badan oo ah beddelka tamarta. Si kastaba ha ahaatee, iyadoo ay ugu wacan tahay awoodda dulin ee ballaaran ee MOSFETs. Tani waxay ku dhejinaysaa shuruudo sare naqshadeynta wareegyada darawalada tuubada wareejinta si loo naqshadeeyo beddelayaasha soo noqnoqda ee DC-DC. Waxaa jira CMOS kala duwan, wareegyada macquulka ah ee BiCMOS iyadoo la adeegsanayo qaab dhismeedka kor u qaadista bootstrap iyo wareegyada darawallada sida culeysyo waaweyn oo awood leh oo nashqad yar oo ULSI ah. Wareegyadani waxay awoodaan inay si habboon ugu shaqeeyaan xaaladaha wax ka yar 1V, waxayna ku shaqeyn karaan shuruudaha culeyska culeyska 1 ~ 2pF inta jeer waxay gaari kartaa tobanaan megabits ama xitaa boqolaal megahertz. Waraaqdan, wareegga kor u qaadista bootstrap waxaa loo isticmaalaa in lagu naqshadeeyo awoodda wadista awoodda culeyska weyn, oo ku habboon korantada hoose, kor u qaadista wareegga wareegga wareegga DC-DC. Danab-dhammaad hooseeya iyo PWM si loo wado MOSFET-dhamaadka sare. calaamad yar oo weyn oo PWM ah si loo kaxeeyo shuruudaha korantada albaabka sare ee MOSFETs.