Lithium oo ah nooc cusub oo baytariyada deegaanka u wanaagsan, ayaa muddo dheer si tartiib tartiib ah loogu isticmaalay baabuurta baytariyada. Lama garanayo sababta oo ah sifada lithium iron fosfate baytariyada dib loo dallaci karo, isticmaalkeeda waa in uu ahaadaa habka ku dallaca batteriga si loo sameeyo dayactirka si looga hortago kororka xad dhaafka ah ee koronta ama heerkulka si loo hubiyo in badqabka batteriga dib loo dallaci karo uu shaqeeyo. Si kastaba ha ahaatee, ilaalinta xad-dhaafka ah waa kala-soocida habka oo dhan ee dallacaadda iyo bixinta heerarka shaqada ee xad-dhaafka ah, markaa sidee loo dooran karaa awoodda MOSFET qeexida tusaalaha iyo barnaamijyada naqshadaynta ee ku habboon wareegga wadista?
Shaqo gaar ah, oo ku salaysan codsiyo kala duwan, ayaa adeegsan doona dhowr awood MOSFETs oo si barbar socda u shaqeynaya si loo yareeyo iska caabbinta iyo hagaajinta sifooyinka kuleyliyaha. Dhammaan hawlgallada caadiga ah, maareeyaan calaamadda xogta si aad MOSFET u maamusho, baakadaha baytariga lithium ee P iyo P-wax soo saarka ee codsiyada shaqaynta. Waqtigan xaadirka ah, MOSFET korontadu waxay ku jirtay xaalad conduction ah, luminta korontadu waa lumis kaliya, ma jirto khasaaro koronto ah, khasaaraha guud ee korantada MOSFET maaha mid sareysa, kor u kaca heerkulku waa yar yahay, sidaas darteed MOSFET korantadu way yarayn kartaa. si badbaado leh u shaqee.
Si kastaba ha ahaatee, marka load waxay abuurtaa cilad gaaban oo gaaban, awoodda gaaban ee gaaban waxay si lama filaan ah uga korodhaa dhowr iyo toban amperes ee hawlgalka caadiga ah ilaa dhowr boqol oo amperes sababtoo ah caabbinta wareeggu maaha mid weyn oo bateriga dib loo soo celin karo wuxuu leeyahay awood xoog leh oo dallad ah, iyo korontaduMOSFET-yada aad ayay u fududahay in lagu burburiyo kiiskan oo kale. Sidaa darteed, haddii ay suurtagal tahay, dooro MOSFET leh RDS yar (ON), si ay u yaraatoMOSFET-yada waxaa loo isticmaali karaa is barbar. Dhowr MOSFETs oo isbarbar socda ayaa u nugul dheelitir la'aanta hadda. Iska caabiyeyaasha riixitaanka ee goonida ah iyo kuwa isku midka ah ayaa looga baahan yahay MOSFET-yada barbar socda si looga fogaado isbedbedelka MOSFET-yada.