MOSFET Wareegga Kahortagga Dib-u-noqoshada

Marka hore, mabda'a aasaasiga ah ee MOSFET ka-hortagga wareegga wareegga

MOSFET ka hortagga dib-u-celinta iyadoo la adeegsanayo sifooyinka beddelka MOSFET, iyada oo la xakameynayo korantada albaabka (G) si loo xaqiijiyo wareegga shidda iyo daminta. Marka polarity sahayda korantadu ay sax tahay, danab albaabka ka dhigaysa MOSFET ee gobolka conduction, hadda si caadi ah u socon karaa; marka polarity sahayda korantada la rogo, danab albaabka ma samayn karaan conduction MOSFET, sidaas gooyay wareegga.

Marka labaad, xaqiijinta gaarka ah ee MOSFET wareegga dib-u-celinta

1. N-channel MOSFET wareegga dib-u-celinta

MOSFET-yada N-channel waxaa badanaa loo isticmaalaa si loo xaqiijiyo wareegyada-ka-hortagga ah. Wareegga, isha (S) ee MOSFET-ka N-channel waxay ku xiran tahay terminaalka taban ee culeyska, qulqulka (D) wuxuu ku xiran yahay terminalka togan ee korontada, iyo albaabka (G) wuxuu ku xiran yahay terminalka taban ee tamarta korontada iyada oo loo marayo resistor ama ay maamusho wareegga xakamaynta.

Xidhiidhka hore: terminalka togan ee sahayda korantada waxa uu ku xidhan yahay D, halka uu teerminalka tabanku ku xidhan yahay S. wakhtigan, resistor-ku waxa uu bixiyaa danabka isha irdaha (VGS) ee MOSFET, iyo marka VGS ka weyn yahay marinka Voltage (Vth) ee MOSFET, MOSFET waxay fulisaa, oo hadda ka soo qulqulaya terminalka togan ee sahayda korantada ee culeyska iyada oo loo marayo MOSFET.

Marka dib loo rogo: terminalka togan ee sahayda korontadu waxa uu ku xidhan yahay S, halka teerminalka tabanna uu ku xidhan yahay D. wakhtigan MOSFET waxa ay ku jirtaa xaalad go'an oo wareegga waa la jaray si culayska looga ilaaliyo dhaawaca sababtoo ah danabka albaabka ma awoodo in uu sameeyo VGS ku filan si uu u sameeyo MOSFET dhaqanka (VGS waxa laga yaabaa in ka yar 0 ama in ka badan Vth).

2. Doorka Qaybaha Kaalmada

Resistor: Waxaa loo isticmaalaa in lagu bixiyo tamarta isha albaabka MOSFET iyo xaddidaadda hadda ee albaabka si looga hortago burburka albaabka.

Xakamaynta korantada: waa qayb ikhtiyaari ah oo loo isticmaalo si looga hortago koronta isha albaabka inay aad u sarreyso oo ay jebiso MOSFET.

Parasitic Diode: Diode parasitic (diode body) ayaa ka jira gudaha MOSFET, laakiin saameyntiisa waxaa badanaa la iska indhatiraa ama laga fogaadaa naqshadeynta wareegga si looga fogaado saameynta xun ee wareegyada ka soo horjeeda.

Saddexaad, faa'iidooyinka MOSFET ka-hortagga wareegga wareegga

 

Khasaare hooseeya: MOSFET iska caabintu waa yar tahay, korantada iska caabbinta waa la dhimay, markaa luminta wareeggu waa yar yahay.

 

 

Kalsoonida sare: shaqada ka-hortagga dib-u-celinta waxaa lagu xaqiijin karaa naqshad wareeg ah oo fudud, MOSFET lafteedu waxay leedahay heer sare oo lagu kalsoonaan karo.

 

Dabacsanaan: Moodooyinka MOSFET kala duwan iyo naqshadaha wareegyada ayaa la dooran karaa si ay u buuxiyaan shuruudaha codsi ee kala duwan.

 

Ka taxadaritaan

 

Naqshadeynta MOSFET wareegga dib-u-celinta, waxaad u baahan tahay inaad hubiso in xulashada MOSFET-yada ay buuxiso shuruudaha codsiga, oo ay ku jiraan danab, hadda, xawaaraha beddelka iyo cabbirrada kale.

 

Waa lagama maarmaan in la tixgeliyo saameynta qaybaha kale ee wareegga, sida awoodda dulinka, inductance parasitic, iwm., si looga fogaado saameynta xun ee waxqabadka wareegga.

 

Codsiyada wax ku oolka ah, imtixaan ku filan iyo xaqiijin ayaa sidoo kale loo baahan yahay si loo hubiyo xasilloonida iyo isku halaynta wareegga.

 

Isku soo wada duuboo, MOSFET wareegtada ka-hortagga-reverse waa nidaam ilaalin awoodeed oo fudud, la isku halayn karo oo hooseeya kaas oo si weyn loogu isticmaalo codsiyo kala duwan oo u baahan ka-hortagga polarity korantada.