Waxaa jira noocyo badan oo kala duwanMOSFET-yada, inta badan waxay u qaybsantaa MOSFET-yada isgoysyada ah iyo irida dahaarka leh ee MOSFETs laba qaybood, oo dhamaantood leh N-channel iyo P-channel dhibcood.
Metal-Oxide-Semiconductor Field-Effect Transistor, oo loo yaqaan MOSFET, waxa loo qaybiyaa nooca xaalufinta MOSFET iyo nooca xoojinta MOSFET.
MOSFETs waxa kale oo loo qaybiyaa tubooyinka hal-albaab iyo laba-albaab. MOSFET Dual-gate waxay leedahay laba albaab oo kala madax-bannaan G1 iyo G2, laga bilaabo dhismaha u dhigma labada MOSFET-yada hal-albaab ah ee isku xidhan, wax-soo-saarkeeduna hadda isbeddelo ku yimaada kontoroolka korantada albaabka. Sifadan MOSFET-dual-albaabka ah waxay keentaa raaxo weyn marka loo isticmaalo sidii cod-weyneyayaasha-soo noqnoqda sare, helaan kontoroolka kontoroolka, isku-darka iyo demodulators.
1, MOSFETnooca iyo qaab-dhismeedka
MOSFET waa nooc ka mid ah FET (nooc kale waa JFET), waxaa lagu soo saari karaa nooc la xoojiyey ama la dhimay, P-channel ama N-channel wadar ahaan afar nooc, laakiin codsiga aragtida kaliya ee N-channel MOSFET oo la xoojiyay iyo P- kanaalka MOSFET, oo inta badan loo yaqaan NMOS, ama PMOS waxaa loola jeedaa labadan nooc. Sida sababta aan loo isticmaalin nooca dhimista MOSFETs, ha kugula talin raadinta sababta asalka ah. Marka la eego labada MOSFET ee la xoojiyey, inta badan la isticmaalo waa NMOS, sababtuna waa in iska caabintu ay yar tahay, oo ay fududahay in la soo saaro. Markaa beddelka sahayda korantada iyo codsiyada wadista baabuurta, guud ahaan isticmaal NMOS. xigashada soo socota, laakiin sidoo kale NMOS-ku-saleysan. Saddex biin oo awood dulin MOSFET ah ayaa u dhexeeya saddexda biin, taas oo aan ahayn baahideenna, laakiin ay ugu wacan tahay xaddidnaanta habka wax-soo-saarka. Jiritaanka capacitance dulin ee design ama doorashada ee wareegga drive si loo badbaadiyo waqti qaar ka mid ah, laakiin ma jirto hab si looga fogaado, ka dibna hordhac faahfaahsan. Jaantuska jaantuska MOSFET waxaa lagu arki karaa, qulqulka iyo isha inta u dhaxaysa diode dulin ah. Tan waxaa lagu magacaabaa diode-ka jirka, marka la wado culeysyo macquul ah, diode-kani aad buu muhiim u yahay. Jid ahaan, diode-ka jidhku waxa uu ku jiraa hal MOSFET, inta badana kuma jiro gudaha gunta wareegga isku dhafan.
2, MOSFET sifada hagida
Ahmiyada conduction-ku waa sida bedelka, oo u dhiganta xidhidhiyaha badeecooyinka. Tilmaamaha NMOS, Vgs ka weyn qiimo gaar ah ayaa qaban doona, oo ku habboon isticmaalka kiiska marka isha la dhigo (wadida-dhamaadka hoose), kaliya korantada albaabka ayaa imanaysa at 4V ama 10V.PMOS sifooyinka, Vgs ka yar qiimo gaar ah ayaa qaban doona, ku haboon in loo isticmaalo kiiska marka isha ku xiran tahay VCC (sare-end drive).
Si kastaba ha noqotee, dabcan, PMOS waxay noqon kartaa mid aad u fudud in loo isticmaalo darawal heer sare ah, laakiin sababtoo ah iska-caabbinta, qaaliga ah, noocyada kala duwan ee is-dhaafsiga iyo sababaha kale, darawalka-dhamaadka sare, badanaa wali waxay isticmaalaan NMOS.
3, MOSFETluminta beddelidda
Haddii ay tahay NMOS ama PMOS, ka dib iska caabbinta ayaa jirta, si hadda uu u isticmaalo tamarta caabbintan, qaybtan tamarta la isticmaalo waxaa loo yaqaannaa khasaaro iska caabin ah. Doorashada MOSFET oo leh wax yar oo iska caabin ah waxay yaraynaysaa khasaaraha iska caabbinta. MOSFET-ta awoodda yar ee caadiga ah ee iska caabbinta waxay caadi ahaan ku jirtaa tobanaan milliohms, dhowr milliohms halkaas. MOS ee wakhtiga iyo goynta, waa in aanay noqon in si degdeg ah loo dhamaystiro danab guud ahaan MOS waxaa jira hab lagu dhaco, hadda socda iyada oo loo marayo habka kor u kaca, inta lagu guda jiro waqtigan, khasaaraha MOSFET waa. wax soo saarka danab iyo hadda waxaa loo yaqaan luminta beddelka. Caadiyan luminta wareejintu aad ayey uga weyn tahay luminta taarikhda, mar kasta oo inta jeer ee beddelka ay si degdeg ah u socoto, waa sii weynaada khasaaraha. Wax soo saar weyn oo danab ah iyo kuwa hadda jira isla markiiba la qabanayo ayaa ka dhigan khasaare weyn. Gaabinta wakhtiga beddelka waxay yaraynaysaa lumitaanka habdhaqan kasta; dhimista inta jeer ee beddelka waxay yaraynaysaa tirada furayaasha halbeeg kasta. Labada habba waxay yarayn karaan luminta beddelka.
4, MOSFET wadista
Marka la barbar dhigo laba-geesoodka transistor-ka, waxa caadi ahaan loo malaynayaa in aan hadda loo baahnayn si loo sameeyo MOSFET, kaliya in danabka GS uu ka sarreeyo qiimo gaar ah. Tani way fududahay in la sameeyo, si kastaba ha ahaatee, waxaan sidoo kale u baahanahay xawaare. Qaab dhismeedka MOSFET waxa aad arkaysaa in uu jiro awood dulin (parasitic capacitance) u dhaxaysa GS, GD, wadista MOSFET waa, aragti ahaan, dallacaadda iyo soo saarista awoodda. Ku dallacaadda capacitor-ku waxa ay u baahan tahay hadda, iyo maadaama ku dallaca capacitor-ka isla markaaba loo arki karo wareeg gaaban, wakhtiga degdega ahi waxa uu noqon doonaa mid sare. Xulashada / nakhshad MOSFET wadista waxa ugu horreeya ee aad fiiro gaar ah u leedahay waa cabbirka wakhtiga wareegga gaaban ee degdegga ah ee la bixin karo. Waxa labaad ee in fiiro gaar ah loo yeesho waa in, guud ahaan loo isticmaalo wadista-dhamaadka sare ee NMOS, marka la eego baahida albaabka albaabka ayaa ka weyn tamarta isha. High-dhamaadka drive MOS tube korantada korantada il iyo danab dheecaan (VCC) isku mid ah, si danab albaabka ka badan VCC 4V ama 10V. Iyadoo loo maleynayo in isla nidaamka, si loo helo koronto ka weyn VCC, waxaan u baahanahay wareeg kor u qaadis gaar ah. Darawallo badan oo matoorrada ah ayaa isku dhafan bamka lacag bixinta, in fiiro gaar ah loo yeesho waa in ay doortaan capacitor-ka dibadda ee ku habboon, si loo helo wareeg gaaban oo ku filan si loo kaxeeyo MOSFET. 4V ama 10V ee kor ku xusan waxaa caadi ahaan loo isticmaalaa MOSFET on danab, design dabcan, baahida loo qabo in ay leeyihiin margin gaar ah. Kolka uu korontadu sarreeyo, xawaaraha gobolka ayaa si degdeg ah u kordha, waxaana hoos u dhacaya iska caabbinta gobolka. Caadi ahaan waxaa jira MOSFET koronto yar oo gobolka ah oo loo isticmaalo qaybo kala duwan, laakiin 12V nidaamyada elektiroonigga ah ee baabuurta, 4V-da caadiga ah ee gobolka ayaa ku filan.
Halbeegyada ugu waaweyn ee MOSFET waa sida soo socota:
1. danab Burburka il irridda BVGS - in geeddi-socodka lagu kordhinayo danab isha isha, si iridda hadda IG ka eber si ay u bilaabaan koror fiiqan ee VGS, loo yaqaan danab Burburka isha iridda BVGS.
2. danab danab VT - danab danab (sidoo kale loo yaqaan danab danab): ka dhigi isha S iyo dheecaan D dhexeeya bilowga channel conductive ka kooban yahay danab albaabka loo baahan yahay; MOSFET N-channel-ka caadiga ah, VT waxay ku saabsan tahay 3 ~ 6V; - ka dib habka hagaajinta, waxay ka dhigi kartaa MOSFET VT qiimaha ilaa 2 ~ 3V.
3. Dheecaan burburka danab BVDS - iyadoo la raacayo xaaladda VGS = 0 (la xoojiyay) , habka kordhinta korantada dheecaanka si ay aqoonsigu u bilaabo inuu si aad ah u kordhiyo marka VDS-ka loo yaqaan 'BVDS burburka qulqulka qulqulka - aqoonsiga ayaa si aad ah u kordhay sababtoo ah labada dhinac ee soo socda:
(1) Burbur ba'an ee lakabka yaraada ee u dhow korantada dheecaanka
(2) Burburinta dhexda-cirifka inter-cirifka - qaar ka mid ah danab yar MOSFET, dhererkeedu channel waa gaaban yahay, waqti ka waqti si loo kordhiyo VDS ah ka dhigi doonaa gobolka dheecaan of lakabka xaalufinta waqti ka waqti si ay u ballaariyaan ilaa gobolka isha. , si ay dhererka channel eber, in uu yahay, inta u dhaxaysa lays biyo-ilo, lays, gobolka isha ee inta badan sidayaal, gobolka isha, si toos ah u adkeysan doona lakabka xaalufin ee nuugista beerta korontada. inuu yimaado gobolka daadsan, taasoo keentay aqoonsi weyn.
4. DC input caabbinta RGS-ie, ratio ee danab lagu daray inta u dhaxaysa isha iridda iyo hadda albaabka, sifada this mararka qaarkood waxaa lagu muujiyay marka la eego irridka hadda socda ee iridda MOSFET ee RGS si fudud u dhaafi karaa 1010Ω. 5.
5. Gm-soo noqnoqoshada-hooseeya ee VDS ee qiimaha go'an ee shuruudaha, microvariance ee qulqulka hadda jira iyo isha isha isha microvariance isbeddelkan waxaa loo yaqaan gm transconductance, oo ka tarjumaysa xakamaynta danab isha iridda on the biya shubashada hadda waa in la tuso in MOSFET-weyneynta ee halbeeg muhiim ah, guud ahaan inta u dhaxaysa dhowr ilaa dhowr mA / V. MOSFET waxay si fudud uga badan kartaa 1010Ω.
Waqtiga boostada: Meey-14-2024
