Xidhiidhka ka dhexeeya MOSFET-yada iyo Taransiistarada Saamaynta Goobta

Warshadaha qaybaha elektaroonigga ah waxay gaadheen halka ay hadda joogaan iyada oo aan la helin caawimaadMOSFET-yadaiyo Saamaynta Goobta. Si kastaba ha ahaatee, dadka qaar ee ku cusub warshadaha elektaroonigga ah, inta badan way fududahay in ay ku wareeraan MOSFETs iyo field effect transistors. Waa maxay xidhiidhka ka dambeeya MOSFETs iyo field effect transistor?

Dhab ahaantii, marka loo eego ka mid ahaanshaha qaybahan elektiroonigga ah, ayaa sheegay in MOSFET ay tahay saameynta goobta transistor-ka wax dhib ah ma laha, laakiin habka kale ee ku wareegsan maaha mid sax ah, taas oo ah in la yiraahdo, saameynta goobta transistor-ka ma aha oo kaliya MOSFET, laakiin sidoo kale waxaa ka mid ah. qaybaha kale ee elegtarooniga ah.

transistors-ka saamaynta goobta waxa loo qaybin karaa tubada isgoysyada iyo MOSFETs. Marka la barbar dhigo MOSFET-yada, tuubooyinka is-goysyada ayaa si yar loo isticmaalo, sidaas awgeed inta jeer ee la sheegayo tuubooyinka is-goysyada ayaa sidoo kale aad u hooseeya, MOSFET-yada iyo transistor-yada saameynta goobta ayaa inta badan la sheegaa, markaa way fududahay in la siiyo isfaham la'aan inay yihiin nooc isku mid ah qaybaha.

MOSFETWaxa loo qaybin karaa nooca kor u qaadida iyo nooca dhimista, mabda'a shaqada ee labadan qaybood ee elektarooniga ah ayaa xoogaa kala duwan, nooca tayeynta ee albaabka (G) oo lagu daray danab togan, qulqulka (D) iyo isha (S) si loo sameeyo dhaqan, halka nooca dhimista xitaa haddii albaabka (G) aan lagu darin danab togan, bulaacada (D) iyo isha (S) sidoo kale waa conductive.

Halkan kala-soocidda transistor-ka saamaynta goobuhu ma dhammaan, nooc kasta oo tuubo ah waxa loo qaybin karaa tuubooyinka N-nooca iyo tuubooyinka P-nooca, markaa transistor-ka saamaynta goobta waxa loo qaybin karaa lix nooc oo tuubooyinka hoose, siday u kala horreeyaan, N-channel transistor-yada saamaynta isku xidhka, P-channel-ka saamaynta goobta saamaynta transistor-ka, N-channel-ka kor u qaadida saamaynta goobta, transistor-ka, iyo nooca P-channel depletion Transistor-ka Saamaynta Goobta.

Qayb kasta oo ka mid ah jaantuska wareegga ee calaamadaha wareegga waa kala duwan yihiin, tusaale ahaan, sawirka soo socdaa wuxuu taxayaa calaamadaha wareegga ee labada nooc ee tuubooyinka isgoysyada, falaarta 2-aad ee pin-ta oo tilmaamaysa tuubada N-channel-ka saameynta saameynta transistor-ka , Tilmaanta dibadda waa isgoysyada P-channel saamaynta transistor-ka.

MOSFETiyo farqiga calaamadda wareegga tuubada isgoysyada ayaa weli ah mid aad u weyn, N-channel nooca depletion field transistor iyo P-channel depletion type field transistor, fallaadh isku mid ah oo tilmaamaysa tuubada nooca N, oo tilmaamaysa dibadda waa tuubada P-nooca. . Sidoo kale, farqiga u dhexeeya N-channel-ka nooca kor u qaadida nooca fal-galka goobta iyo P-channel-ka nooca kor u qaadista transistor-ka waxay sidoo kale ku saleysan tahay tilmaamida falaarta, oo tilmaamaysa tuubada waa N-nooca, oo tilmaamaya dibadda waa nooca P-nooca.

Transistor-ka saamaynta kor u qaadida (oo ay ku jiraan nooca N-tuubada iyo tuubada nooca P) iyo transistor-ka saamaynta deplement (oo ay ku jiraan nooca N-tuubada iyo tuubada nooca P) calaamadaha wareeggu aad bay isugu dhow yihiin. Farqiga u dhexeeya labada waa in mid ka mid ah calaamadaha lagu matalo xariiq la gooyey iyo kan kale oo leh xarriiq adag. Xariiqda dhibicda leh waxay muujineysaa kor u qaadida saamaynta transistor-ka iyo xariiqda adag waxay muujineysaa transistor-ka saameynta goobta yaraada.